Document
DIODE MODULE
DD(KD)100HB120/160
UL;E76102 M Power Diode Module DD100HB series are designed for various rectifier circuits. DD100HB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for various input voltage. Isolated mounting base Two elements in a package for simple (single and three phase) bridge connections Highly reliable glass passivated chips High surge current capability Applications Various rectifiers, Battery chargers, DC motor drives
Unit a
Maximum Ratings
Symbol VRRM VRSM Symbol IF
AV
Tj 25 Item Ratings DF100HB120 1200 1350 Conditions Single phase, half wave, 180 conduction, Tc 111 Single phase, half wave, 180 conduction, Tc 111
2 cycle, 50/60HZ, peak value, non-repetitive Value for one cycle of surge current 1
DD100HB160 1600 1700 Ratings 100 155 1800/2000 16500 40 150 40 125 2500 4.7 48) 2.7 28) 170
Unit V V Unit A A A A2S
Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Item Average Forward Current R.M.S. Forward Current Surge Forward Current I2t Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass Mounting M6 Terminal M5 A.C.1minute
IF (RMS) IFSM I2t Tj Tstg VISO
V N m f B g
Recommended Value 2.5 3.9 25 40 Recommended Value 1.5 2.5 15 25
Electrical Characteristics
Symbol IRRM VFM Rth j-c Item Repetitive Peak Reverse Current, max. Forward Voltage Drop, max. Thermal Impedance, max. at VDRM, Conditions single phase, half wave. Tj 150 Inst. measurement Foward current 320A Tj 25 Junction to case Ratings 30 1.35 0.30 Unit mA V /W
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DD(KD)100HB120/160
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