D2224UK FET Datasheet

D2224UK Datasheet, PDF, Equivalent


Part Number

D2224UK

Description

METAL GATE RF SILICON FET

Manufacture

Seme LAB

Total Page 2 Pages
Datasheet
Download D2224UK Datasheet


D2224UK
TetraFET
D2224UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
A
8
D7
6
5
1
2
CB
3
4
N
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 7.2V – 850MHz
SINGLE ENDED
H
K
L
J
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
M
E
FG
SO8 PACKAGE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
29W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
8A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 5/99

D2224UK
D2224UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 10mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 5W
VDS = 7.2V
f = 850MHz
VDS = 0
VDS = VGS
ID = 0.8A
IDQ = 0.4A
0.5
0.72
7
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0V VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
4 µA
7V
S
dB
%
48 pF
40 pF
4 pF
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 5/99


Features TetraFET D2224UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. A N 8 D 1 2 C B P 7 6 5 3 4 GOLD ME TALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 7.2V – 850MHz SINGLE ENDED FEATURES H K L J E F G M • SIMP LIFIED AMPLIFIER DESIGN • SUITABLE FO R BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW N OISE • HIGH GAIN SO8 PACKAGE PIN 1 SOURCE PIN 2 – DRAIN PIN 3 – DRA IN PIN 4 – SOURCE Dim. A B C D E F G H J K L M N P mm 4.06 5.08 1.27 0.51 3. 56 4.06 1.65 0.76 0.51 1.02 45° 0° 7 0.20 2.18 4.57 Tol. ±0.08 ±0.08 ±0 .08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 - 0.00 Min. Max. Max. Min. Max. ±0.08 Ma x. ±0.08 PIN 5 – SOURCE PIN 6 – G ATE PIN 7 – GATE PIN 8 – SOURCE Inc hes 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0 .008 0.086 0.180 Tol. ±0.003 ±0.003 0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003 APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 2.
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