Document
TetraFET
D2290UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Top View
E 4 3
D
C K L
1 F B
2
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 12.5V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
A
J
G
H
I
SOT143 PACKAGE
PIN 1 – DRAIN PIN 2 – SOURCE PIN 3 – GATE PIN 4 – SOURCE
• VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE
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• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc.
Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1W 40V ±20V 2A –65 to 125°C 150°C
Document Number 3890 Issue 3
D2290UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 1W VDS = 12.5V f = 1GHz VDS = 0V VGS = –5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 50mA ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 0.5 0.18 10 40 20:1 40
Typ.
Max. Unit
V 1 1 7 mA µA V S dB % — 12 10 1 pF pF pF
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case Thermal Resistance Junction – Case Max. 175 °C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Document Number 3890 Issue 3
.