D2293UK

TetraFET D2293UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE SOT 171 PIN 1 PIN 3 PIN 5 SOURCE GATE SOURCE PIN 2 PIN 4 PIN 6 SOURCE DRAIN SOURCE HIGH GAIN – 11 dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current * Storage Temperature Maximum Operating Junction Temperature 42W 40V ±20V 8A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Prelim. 7/99 D2293UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 12.5V f = 500MHz VDS = 0 VGS = –5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.6A 1 0.72 11 50 20:1 40 Typ. Max. Unit V 1 6 ...