D44H8 - D44H11 D45H8 - D45H11
Complementary power transistors
Features
■ Low collector-emitter saturation voltage ■ Fas...
D44H8 - D44H11 D45H8 - D45H11
Complementary power
transistors
Features
■ Low collector-emitter saturation voltage ■ Fast switching speed
Applications
■ Power amplifier ■ Switching circuits
Description
The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications.
.
TAB
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
D44H8
D44H8
D44H11
D44H11
D45H8
D45H8
D45H11
D45H11
Polarity
NPN NPN PNP PNP
Package TO-220 TO-220 TO-220 TO-220
October 2009
Doc ID 4213 Rev 5
Packaging Tube Tube Tube Tube
1/8
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8
Absolute maximum ratings
1 Absolute maximum ratings
D44H8, D44H11, D45H8, D45H11
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
VCEO
VEBO IC ICM
PTOT TSTG
TJ
Collector-emitter voltage (IB = 0) D44H8 - D45H8 Collector-emitter voltage (IB = 0) D44H11 - D45H11 Emitter-base voltage (IC = 0) Collector current Collector peak current Total dissipation at Tcase = 25 °C Storage temperature Max. operating junction temperature
For
PNP types voltage and current values are negative.
Table 3. Thermal data
Symbol
Parameter
RthJC RthJA
Thermal resistance junction-case max Thermal resistance junction-ambient max
Value 60 80 5 10 20 50
-55 to 150 150
Unit V V V A A W °C °C
Value 2.5 62.5
Unit °C/W °C/W
2/8 Doc ID 4213 Rev 5
D44H8, D44H11, D45H8, D45H11
2 Electrical characteristics
Electrical characteristics
Not...