D44H8

D44H8 / NZT44H8 Discrete POWER & Signal Technologies D44H8 NZT44H8 C B E C E C TO-220 SOT-223 B NPN Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4Q. Absolute Maximum Ratings* Symbol VCEO IC TJ, Tstg Collector-Emitter Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 60 8.0 -55 to +150 Units V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D44H8 60 480 2.1 62.5 Max *NZT44H8 1.5 12 83.3 2 Units W mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . © 1997 Fairchild Semiconductor Corporation D44H8 / NZT44H8 NPN Power Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO ICBO IEBO Collector-Emitter Breakdown Voltage* ...