MECHANICAL DATA
A
B C
1
4 M
2 3
F
D E
G
HK
PIN 1 PIN 3
SOURCE SOURCE
DA
PIN 2 PIN 4
IJ
DRAIN GATE
DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25
Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800
Tol. 0.005 0.005
5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010
TetraFET
D1002UK
METAL GATE RF SILICON FET
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS RF FET 40W – 28V – 175MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
87W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
10A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
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E-mail:
[email protected] Website: http://www.semelab.co.uk
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D1002UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* GPS Common Source Power Gain η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V ID = 10mA VDS = 10V PO = 40W VDS = 28V f = 175MHz
VDS = 0 VDS = VGS ID = 2A
IDQ = 0.2A
1 1.6 16 50 20:1
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 28V VDS = 28V VDS = 28V
VGS = –5V f = 1MHz VGS = 0 f = 1MHz VGS = 0 f = 1MHz
Typ.
Max. Unit
V
2 mA
1 µA 7V
S dB % — 120 pF 60 pF 5 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 2.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
[email protected] Website: http://www.semelab.co.uk
3/99
D1002UK
80 80
70 70
60 60
Pout W
50 40 30
20
10
f1 = 175.0MHz Idq = 0.2A VDS = 28V
50 Drain Efficiency
40 %
30
20
10
00 012345678
Pin W
Pout Drain Efficiency
Figure 1 – Power Output and Efficiency vs. Power Input.
-10
-15
-20
IMD3 -25 dBc -30
-35
-40
-45
-50 0
f1 = 175.0MHz f2 = 175.1MHz VDS = 28V
5 10 15 20 25 30 35 40 45 50 55 60 65
Pout W PEP
Idq = 0.2A Idq = 1A
Figure 3 – IMD vs. Output Power.
80 17
70 16
60
Pout W
50 40 30
f1 = 175.0MHz Idq =.