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D1002UK Dataheets PDF



Part Number D1002UK
Manufacturers Seme LAB
Logo Seme LAB
Description METAL GATE RF SILICON FET
Datasheet D1002UK DatasheetD1002UK Datasheet (PDF)

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 TetraFET D1002UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON.

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MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 TetraFET D1002UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 16 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 87W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 10A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 3/99 D1002UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Drain–Source BVDSS Breakdown Voltage VGS = 0 ID = 100mA 70 IDSS Zero Gate Voltage Drain Current VDS = 28V VGS = 0 IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward Transconductance* GPS Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance VGS = 20V ID = 10mA VDS = 10V PO = 40W VDS = 28V f = 175MHz VDS = 0 VDS = VGS ID = 2A IDQ = 0.2A 1 1.6 16 50 20:1 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 28V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 f = 1MHz VGS = 0 f = 1MHz Typ. Max. Unit V 2 mA 1 µA 7V S dB % — 120 pF 60 pF 5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 2.0°C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 3/99 D1002UK 80 80 70 70 60 60 Pout W 50 40 30 20 10 f1 = 175.0MHz Idq = 0.2A VDS = 28V 50 Drain Efficiency 40 % 30 20 10 00 012345678 Pin W Pout Drain Efficiency Figure 1 – Power Output and Efficiency vs. Power Input. -10 -15 -20 IMD3 -25 dBc -30 -35 -40 -45 -50 0 f1 = 175.0MHz f2 = 175.1MHz VDS = 28V 5 10 15 20 25 30 35 40 45 50 55 60 65 Pout W PEP Idq = 0.2A Idq = 1A Figure 3 – IMD vs. Output Power. 80 17 70 16 60 Pout W 50 40 30 f1 = 175.0MHz Idq =.


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