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D1011 Datasheet, Equivalent, SILICON FET.

METAL GATE RF SILICON FET

METAL GATE RF SILICON FET

 

 

 

Part D1011
Description METAL GATE RF SILICON FET
Feature TetraFET D1011UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PUR POSE SILICON DMOS RF FET 10W – 28V 1GHz SINGLE ENDED FEATURES H K L J E F G M
• SIMPLIFIED AMPLIFIER DES IGN
• SUITABLE FOR BROAD BAND APPLICA TIONS PIN 5 – SOURCE PIN 6 – GATE P IN 7 – GATE PIN 8 – SOURCE SO8 PAC KAGE PIN 1 – SOURCE PIN 2 – DRAIN P IN 3 – DRAIN PIN 4 – SOURCE
• VE RY LOW Crss
• SIMPLE BIAS CIRCUITS LOW NOISE
• HIGH GAIN – 13 dB MIN IMUM Dim.
A B C D E F G H J K L M N P mm 4.
06 5.
08 1.
27 0.
51 3.
56 4.
06 1.
65 0.
76 0.
51 1.
02 45° 0° 7° 0.
20 2.
18 4 .
57 Tol.
±0 .
Manufacture Seme LAB
Datasheet
Download D1011 Datasheet
Part D1011
Description METAL GATE RF SILICON FET
Feature TetraFET D1011UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PUR POSE SILICON DMOS RF FET 10W – 28V 1GHz SINGLE ENDED FEATURES H K L J E F G M
• SIMPLIFIED AMPLIFIER DES IGN
• SUITABLE FOR BROAD BAND APPLICA TIONS PIN 5 – SOURCE PIN 6 – GATE P IN 7 – GATE PIN 8 – SOURCE SO8 PAC KAGE PIN 1 – SOURCE PIN 2 – DRAIN P IN 3 – DRAIN PIN 4 – SOURCE
• VE RY LOW Crss
• SIMPLE BIAS CIRCUITS LOW NOISE
• HIGH GAIN – 13 dB MIN IMUM Dim.
A B C D E F G H J K L M N P mm 4.
06 5.
08 1.
27 0.
51 3.
56 4.
06 1.
65 0.
76 0.
51 1.
02 45° 0° 7° 0.
20 2.
18 4 .
57 Tol.
±0 .
Manufacture Seme LAB
Datasheet
Download D1011 Datasheet

D1011

D1011
D1011

D1011

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