METAL GATE RF SILICON FET
TetraFET
D1017UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SIL...
Description
TetraFET
D1017UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE
DM
PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE
DIM A B C D E F G H I J K M
mm 24.76 18.42 45° 6.35 3.17 Dia. 5.71 12.7 Dia. 6.60 0.13 4.32 3.17 26.16
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25
Inches 0.975 0.725 45° 0.25 0.125 Dia. 0.225 0.500 Dia. 0.260 0.005 0.170 0.125 1.03
Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010
HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 220W 70V ±20V 30A –65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.10/00
D1017UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency...
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