TetraFET
D1017UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE
DM
PIN 1 PIN 3 SOURCE SOURCE PIN 2 PIN 4 DRAIN GATE
DIM A B C D E F G H I J K M
mm 24.76 18.42 45° 6.35 3.17 Dia. 5.71 12.7 Dia. 6.60 0.13 4.32 3.17 26.16
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25
Inches 0.975 0.725 45° 0.25 0.125 Dia. 0.225 0.500 Dia. 0.260 0.005 0.170 0.125 1.03
Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 220W 70V ±20V 30A –65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim.10/00
D1017UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 150W VDS = 28V f = 175MHz VDS = 0V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.6A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 6A 1 4.8 13 50 20:1 70
Typ.
Max. Unit
V 6 1 7 mA
mA
V S dB % —
VGS(th) Gate Threshold Voltage*
h
VSWR Load Mismatch Tolerance Ciss Coss Crss
360 180 15
pF pF pF
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case Thermal Resistance Junction – Case Max. 0.8°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim.10/00
D1017UK
3RXW :
(IILFLHQF\ 3RXW :
3LQ:
3LQ:
9GV 9 ,GT $ I 0+]
3RXW 'UDLQ(IILFLHQF\
9GV 9 ,GT $ I 0+]
*DLQ G%
3RXW *DLQ
Figure 1 Power Out & Efficiency vs Power Input
,0' G%F
Figure 2 Power Out & Gain vs. Power Input
I 0+] I 0+] ,GT $ 9GV 9
,0'
3RXW:3(3
Figure 3 IMD Versus Power Output Typical S Parameters
! Vds=28V # MHZ S MA R 50 !Freq !MHz 50 100 150 200 250 300 350 400 450 500 S11 mag 0.83 0.89 0.93 0.95 0.96 0.97 0.97 0.98 0.98 0.99 S21 mag 7.42 3.56 2.05 1.23 0.85 0.62 0.44 0.35 0.27 0.23 Idq=0.6A
ang -167.4 -169.4 -169.3 -170.1 -170.2 -169.7 -170.4 -169.3 -169 -168.5
ang 93.3 64.1 45.2 34.2 26 22.6 15.2 17.8 15.9 19.6
S12 mag 0.009 0.008 0.01 0.016 0.023 0.03 0.035 0.043 0.046 0.053
ang 26.5 44.1 75.4 88.2 89.1 90.1 86.1 85.2 84 83.1
S22 mag 0.79 0.82 0.87 0.91 0.94 0.96 0.96 0.97 0.98 0.99
ang -167 -163.7 -164.7 -166.3 -167.7 -169 -169.8 -170.5 -171.7 -171.4
Prelim.10/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
D1017UK
=/RSW
0DWFKLQJ 1HWZRUN
=6RSW
0DWFKLQJ 1HWZRUN
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
=6RSW
0+]
5
M;
=/RSW
I 0+]
=6 5 M;
Prelim.10/00
D1017UK
G a te - B ia s
1 K
1 0 0 K
1 5 1 0 0 p F L 4 1 0 p F 7 x 7 m m c o n ta c t p a d T 3 1 0 n F 1 0 0 n F 1 0 u F
+ 2 8 V
1 0 0 n F
1 .5 K
1 0 0 p F 1 K 1 6 -1 0 0 p F T 1 3 3 p F T 2 1 6 -1 0 0 p F L 1 T 3 7 x 7 m m c o n ta c t p a d D 1 0 1 7 K
L 3 3 3 p F T 3 L 2 T 1 3 5 p F T 1 1 0 -5 0 p F
3 .5 -2 5 p F
175MHz TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5 All microsptrip li.