METAL GATE RF SILICON FET
TetraFET
D1018UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B A C E (2 pls)
K
1
2
3
4
F
G
8
J Typ.
7
6
5
GOL...
Description
TetraFET
D1018UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B A C E (2 pls)
K
1
2
3
4
F
G
8
J Typ.
7
6
5
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
D M Q
P
I
N
O
H
SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 10 dB MINIMUM
DD
PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (COMMON) DRAIN 2 SOURCE (COMMON) GATE 1 DIM A B C D E F G H I J K M N O P Q mm 9.14 12.70 45° 6.86 0.76 9.78 19.05 4.19 3.17 1.52R 1.65R 16.51 22.86 0.13 6.35 10.77 PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 SOURCE (COMMON) GATE 2 SOURCE (COMMON) Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.025 0.005
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.64 0.13
Inches 0.360 0.500 45° 0.270 0.030 0.385 0.750 0.165 0.125 0.060R 0.065R 0.650 0.900 0.005 0.250 0.424
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 250W 70V ±20V 15A –65 to 150°C 200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
D1018UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER...
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