D1018UK

TetraFET D1018UK METAL GATE RF SILICON FET MECHANICAL DATA B A C E (2 pls) K 1 2 3 4 F G 8 J Typ. 7 6 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN D M Q P I N O H SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 10 dB MINIMUM DD PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (COMMON) DRAIN 2 SOURCE (COMMON) GATE 1 DIM A B C D E F G H I J K M N O P Q mm 9.14 12.70 45° 6.86 0.76 9.78 19.05 4.19 3.17 1.52R 1.65R 16.51 22.86 0.13 6.35 10.77 PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 SOURCE (COMMON) GATE 2 SOURCE (COMMON) Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.025 0.005 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.64 0.13 Inches 0.360 0.500 45° 0.270 0.030 0.385 0.750 0.165 0.125 0.060R 0.065R 0.650 0.900 0.005 0.250 0.424 APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 250W 70V ±20V 15A –65 to 150°C 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/95 D1018UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER...