TetraFET
D1020UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
B
G (typ)
2 1
H D
3
P (2 pls) A
5
4
GOLD M...
TetraFET
D1020UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
B
G (typ)
2 1
H D
3
P (2 pls) A
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL
FEATURES
EXTRA LOW Crss
E (4 pls) F I
N
M
O
J
K
SIMPLIFIED AMPLIFIER DESIGN
DRAIN 1 GATE 2
DR
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.05 10.77 45° 9.78 5.71 27.94 1.52R 10.16 22.22 0.13 2.72 1.70 5.08 34.03 1.57R Tol. 0.50 0.13 5° 0.13 0.13 0.13 0.13 0.13 MAX 0.02 0.13 0.13 0.50 0.13 0.08 PIN 2 PIN 4
SUITABLE FOR BROAD BAND APPLICATIONS SIMPLE BIAS CIRCUITS
Inches 0.75 0.424 45° 0.385 0.225 1.100 0.060R 0.400 0.875 0.005 0.107 0.067 0.200 1.340 0.062R
Tol. 0.020 0.005 5° 0.005 0.005 0.005 0.005 0.005 MAX 0.001 0.005 0.005 0.020 0.005 0.003
LOW NOISE HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk Prelim. 11/00
Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature
389W 70V ±20V 20A –65 to 150°C 200°C
D1020UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IG...