D1031 FET Datasheet

D1031 Datasheet, PDF, Equivalent


Part Number

D1031

Description

METAL GATE RF SILICON FET

Manufacture

Seme LAB

Total Page 2 Pages
Datasheet
Download D1031 Datasheet


D1031
TetraFET
D1031UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
GOLD METALLISED
MULTI-PURPOSE SILICON
2 PL.
0.47
1.65
2 PL.
4
3.00
2 PL.
2.07
2 PL.
0.381
3
2
0.47
2 PL.
1
0.10
TYP.
5.50 ± 0.15
1.27 ± 0.05
2 PL.
0.80
4 PL.
4.90 ± 0.15
0.3 R.
4 PL.
5
1.27
6
1.27
7
1.27
8
0.10 R.
TYP.
6.50 ±
0.15
0.10
TYP.
2.313
± 0.2
0.360
± 0.005
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
FEATURES
0.508 • SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
30W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99

D1031
D1031UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 10W
VDS = 28V
f = 1GHz
VDS = 0
VDS = VGS
ID = 1A
IDQ = 0.1A
1
0.8
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0V
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
60 pF
30 pF
2.5 pF
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99


Features TetraFET D1031UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0 .47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0 .2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SIL ICON DMOS RF FET 10W – 28V – 1GHz S INGLE ENDED 0.360 ± 0.005 6 1.27 6.50 ± 0.15 2 1 0.47 2 PL. 0.80 4 PL. 4.9 0 ± 0.15 7 1.27 8 0.10 R. TYP. FEA TURES 0.10 TYP. 0.508 0.10 TYP. • S IMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PA CKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GAT E PIN 8 – SOURCE • VERY LOW Crss SIMPLE BIAS CIRCUITS • LOW NOISE HIGH GAIN – 13 dB MINIMUM Ceramic Material: Alumina. Parts can also be s upplied with AlN or BeO for improved th ermal resistance. Contact Semelab for d etails. APPLICATIONS • HF/VHF/UHF CO MMUNICATIONS from 1 MHz to 1 GHz ABSOL UTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Po.
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