D1053UK

TetraFET D1053UK METAL GATE RF SILICON FET MECHANICAL DATA B B A A K D E C (2 pls) 2 1 3 4 5 9 8 7 6 O (2 pls) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 50W – 28V – 1GHz PUSH–PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN F G H J I M N SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE DB PIN 1 PIN 3 PIN 5 PIN 7 PIN 9 SOURCE (COMMON) DRAIN 2 DRAIN 4 GATE 3 GATE 1 DIM A B C D E F G H I J K M N O mm 1.52 1.52 45° 16.38 6.35 18.41 12.70 5.08 24.76 1.52 0.81R 0.13 2.16 1.65R PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 DRAIN 3 GATE 4 GATE 2 Tol. 0.13 0.13 5° 0.26 0.13 0.13 0.26 0.13 0.13 0.13 0.13 0.02 0.13 0.13 Inches 0.060 0.060 45° 0.645 0.250 0.725 0.500 0.200 0.975 0.060 0.032R 0.005 0.085 0.065R Tol. 0.005 0.005 5° 0.010 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.001 0.005 0.005 HIGH GAIN – 7.5 dB MINIMUM APPLICATIONS VHF/UHF COMMUNICATIONS from 400 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 175W 70V ±20V 5A –65 to 150°C 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/95 D1053UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gfs Drain–Source Breakdown Voltage Zero Gate...