D1082UK

TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 0.64 (0.025) 5.33 (0.210) 0.89 (0.035) 2 pls. 2.29 (0.090) 0.51 (0.020) REF. 0.64 4.32 (0.170) (0.025) SEME D1082UK METAL GATE RF SILICON FET 4 7˚ ± 1˚ 7˚ ± 1˚ 7˚ ± 1˚ 6.10 (0.240) 1.14 (0.045) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS 1 16.76 (0.660) 2 3 2.29 (0.090) 4.57 (0.180) 0.76 (0.030) REF. 0.51 (0.020) REF. LOW NOISE HIGH GAIN – 13dB MINIMUM SURFACE MOUNT 1.02 (0.040) APPLICATIONS TO–251 PACKAGE PIN 1 – GATE PIN 3 – SOURCE PIN 2 – DRAIN PIN 4 – DRAIN LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A –65 to 125°C 150°C Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email [email protected] Prelim. 7/96 LAB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID ...