D1084UK

TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) 3.83 Dia. 4.08 4 SEME D1084UK METAL GATE RF SILICON FET 9.65 10.66 4.82 5.33 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED FEATURES 12.70 13.71 9.01 9.52 1 2 3 0.726 min. SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS 0.73 0.88 0.31 0.45 2.41 2.92 13.71 m in. LOW NOISE HIGH GAIN – 13dB MINIMUM SURFACE MOUNT 2.28 2.79 4.82 5.33 APPLICATIONS TO–220 PLASTIC PACKAGE PIN 1 – GATE PIN 3 – SOURCE PIN 2 – DRAIN PIN 4 – DRAIN LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A –65 to 125°C 150°C Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email [email protected] Prelim. 7/96 LAB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V VDS = 28V PO = 4W VDS = 0V ID = 10mA VGS = 0 VDS = 0 VDS ...