D1093UK

TetraFET D1093UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM SOT 171 PIN 1 PIN 3 PIN 5 SOURCE GATE SOURCE PIN 2 PIN 4 PIN 6 SOURCE DRAIN SOURCE APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 42W 65V ±20V 4A –65 to 150°C 200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/96 D1093UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 10W VDS = 28V f = 500MHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.8A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.72 13 50 20:1 65 Typ. Max. Unit V 1 4 7 mA µA V S dB % — 48 24 2 pF pF ...