Document
SHINDENGEN
Schottky Rectifiers (SBD)
Dual
D10SC4MR
40V 10A
FEATURES •œ Tj150•Ž •œ PRRSM avalanche guaranteed •œ Fully Isolated Molding APPLICATION
•œ Switching power supply
OUTLINE DIMENSIONS
Case : ITO-220 Unit : mm
•œ DC/DC converter •œ Home Appliances, Office Equipment •œ Telecommunication
RATINGS
•œAbsolute Maximum Ratings (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction TemperatureTj 150 •Ž Maximum Reverse Voltage V 40 V RM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 45 V Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, 10 Tc=123•Ž A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125•Ž 100 A Repetitive Peak Surge Reverse Power PRRSM Pulse width 10ƒÊs, Rating of per diode, Tj= 25•Ž 330 W Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 kV Mounting Torque TOR (Recommended torque• F 0.3N¥m) 0.5 N¥m •œElectrical Characteristics (If not specified Tc=25•Ž) Item Symbol Conditions Ratings Unit Forward Voltage I =5A, Pulse measurement, Rating of per diode VF F Max.0.55 V Reverse Current I R V R =V RM,Pulse measurement, Rating of per diode Max. 3.5 mA Junction Capacitance =10V, V Rating of per diode Cj f=1MHz,R Typ.180 pF ƒÆjc junction to case Max.3.3 •Ž/W Thermal Resistance ƒÆcf case to heatsink, Mounting torque=0.5N¥m Max.1.5
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
D10SC4MR
Forward Voltage
10
Forward Current IF [A]
Tc=150 °C [MAX] Tc=150 °C [TYP] Tc=25 °C [MAX] Tc=25 °C [TYP] 1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage VF [V]
D10SC4MR
Junction Capacitance
f=1MHz Tc=25°C TYP per diode
1000
Junction Capacitance Cj [pF]
100
0.1
1
10
Reverse Voltage VR [V]
D10SC4MR
1000
Reverse Current
Tc=150 °C [MAX]
100
Tc=150 °C [TYP]
Reverse Current IR [mA]
Tc=125 °C [TYP] 10 Tc=100 °C [TYP]
1
Tc=75 °C [TYP]
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
D10SC4MR
20
Reverse Power Dissipation
DC
Reverse Power Dissipation PR [W]
D=0.05 15 0.1 0.2 0.3 10 0.5
5
SIN 0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150 °C
0 VR tp D=tp /T T
D10SC4MR
10
Forward Power Dissipation
DC
Forward Power Dissipation PF [W]
D=0.8 8 0.3 6 0.05 4 0.2 0.1 SIN 0.5
2
0
0
2
4
6
8
10
12
14
16
Average Rectified Forward Current IO [A]
Tj = 150 °C IO 0 tp D=tp /T T
D10SC4MR
20
Derating Curve
Average Rectified Forward Current IO [A]
DC 15 D=0.8
0.5 10 SIN 0.3 0.2 5 0.1 0.05
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = 20V 0 0
IO
VR tp D=tp /T T
D10SC4MR
20
Derating Curve
Average Rectified Forward Current IO [A]
DC 15 D=0.8
0.5 10 SIN 0.3 0.2 5 0.1 0.05
0
0
20
40
60
80
100
120
140
160
Heatsink Temperature Tf [°C]
VR = 20V 0 0
IO
VR tp D=tp /T T
D10SC4MR
200
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
150
non-repetitive, sine wave, Tj=125°C before surge current is applied
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP
SBD
10
Repetitive Surge Reverse Power Capability
PRRSM (t p) / PRRSM (t p=10µs) Ratio
1
0.1
1
10
100
Pulse Width t p [ µs]
IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP
.