D1202 FET Datasheet

D1202 Datasheet, PDF, Equivalent


Part Number

D1202

Description

METAL GATE RF SILICON FET

Manufacture

Seme LAB

Total Page 2 Pages
Datasheet
Download D1202 Datasheet


D1202
MECHANICAL DATA
C
2
1
A
3
F
(2 pls)
H
J
N
(typ)
B
D
(2 pls)
MI
PIN 1
PIN 3
SOURCE
GATE
E KG
DP
PIN 2 DRAIN
DIM mm
A 16.51
B 6.35
C 45°
D 3.30
E 18.92
F 1.52
G 2.16
H 14.22
I 1.52
J 6.35
K 0.13
M 5.08
N 1.27 x 45°
Tol. Inches Tol.
0.25 0.650 0.010
0.13 0.250 0.005
5° 45° 5°
0.13 0.130 0.005
0.08 0.745 0.003
0.13 0.060 0.005
0.13 0.085 0.005
0.08 0.560 0.003
0.13 0.060 0.005
0.13 0.250 0.005
0.03 0.005 0.001
0.51 0.200 0.020
0.13 0.050 x 45° 0.005
TetraFET
D1202UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
87W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
10A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00

D1202
D1202UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 20W
VDS = 12.5V
f = 500MHz
VDS = 0
VDS = VGS
ID = 2A
IDQ = 0.4A
0.5
1.6
10
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0
VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
120 pF
80 pF
8 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 2.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 12/00


Features TetraFET D1202UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALL ISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED F EATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • USE FUL PO AT 1GHz DP PIN 1 PIN 3 SOURCE G ATE PIN 2 DRAIN DIM mm A 16.51 B 6.35 C 45° D 3.30 E 18.92 F 1.52 G 2.16 H 1 4.22 I 1.52 J 6.35 K 0.13 M 5.08 N 1.27 x 45° Tol. 0.25 0.13 5° 0.13 0.08 0 .13 0.13 0.08 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.130 0.745 0. 060 0.085 0.560 0.060 0.250 0.005 0.200 0.050 x 45° Tol. 0.010 0.005 5° 0.0 05 0.003 0.005 0.005 0.003 0.005 0.005 0.001 0.020 0.005 • LOW NOISE • HI GH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 M Hz to 1 GHz ABSOLUTE MAXIMUM RATINGS ( Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Di ssipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current S.
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