D1207 FET Datasheet

D1207 Datasheet, PDF, Equivalent


Part Number

D1207

Description

METAL GATE RF SILICON FET

Manufacture

Seme LAB

Total Page 2 Pages
Datasheet
Download D1207 Datasheet


D1207
TetraFET
D1204UK
METAL GATE RF SILICON FET
MECHANICAL DATA
D
(2 pls)
C
E
B 12 3
A
54
G
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
30W – 12.5V – 500MHz
SINGLE ENDED
PIN 1
PIN 3
PIN 5
H
I
FM
K
DT
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
JN
GATE
SOURCE (COMMON)
DIM mm
A 6.35 DIA
B 3.17 DIA
C 18.41
D 5.46
E 5.21
F 7.62
G 21.59
H 3.94
I 12.70
J 0.13
K 24.76
M 2.59
N 4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
117W
BVDSS
Drain – Source Breakdown Voltage
40V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
15A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 1/99

D1207
D1204UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 100mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 30W
VDS = 12.5V
f = 500MHz
VDS = 0
VDS = VGS
ID = 1A
IDQ = 0.6A
0.5
1.2
10
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0
VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1 mA
3 µA
7V
S
dB
%
180 pF
120 pF
12 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.5°C / W
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 1/99


Features TetraFET D1204UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G GOLD METALLISED MULTI-PU RPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED FEATURES • S IMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr ss 5 4 H I F M K J N DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURC E (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.4 1 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.1 3 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.1 3 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0. 005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 GATE SOURCE (C OMMON) • USEFUL PO AT 1GHz • LOW N OISE • HIGH GAIN – 10 dB MINIMUM A PPLICATIONS • HF/VHF/UHF COMMUNICATIO NS from 1 MHz to 1 GHz ABSOLUTE MAXIMU M RATINGS (Tcase = 25°C unless otherwi se stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown.
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