METAL GATE RF SILICON FET
TetraFET
D1213UK
MECHANICAL DATA
EB
D
F
8 7
6 5
O
J KL
C
1 2
A
3 4
Q
N
M
I P
H
G
DBC1 Package
PIN 1 Source
P...
Description
TetraFET
D1213UK
MECHANICAL DATA
EB
D
F
8 7
6 5
O
J KL
C
1 2
A
3 4
Q
N
M
I P
H
G
DBC1 Package
PIN 1 Source
PIN 5 Source
PIN 2 Drain
PIN 6 Gate
PIN 3 Drain
PIN 7 Gate
PIN 4 Source
PIN 8 Source
DIM mm
Tol. Inches Tol.
A 6.47 0.08 .255 .003
B 0.76 0.08 .030 .003
C 45° 5° 45° 5°
D 0.76 0.08 .030 .003
E 1.14 0.08 .045 .003
F 2.67 0.08 .105 .003
G 11.73 0.13 .462 .005
H 8.43 0.08 .332 .003
I 7.92 0.08 .312 .003
J 0.20 0.02 .008 .001
K 0.64 0.02 .025 .001
L 0.30 0.02 .012 .001
M 3.25 0.08 .128 .003
N 2.11 0.08 .083 .003
O 6.35SQ 0.08 .250SQ .003
P 1.65 0.51 .065 .020
Q 0.13 max .005 max
METAL GATE RF SILICON FET
GOLD METALLISED MULTI-PURPOSE SILICON
DMOS RF FET 6W – 7.2V – 500MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss LOW NOISE HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwis...
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