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D1260UK Dataheets PDF



Part Number D1260UK
Manufacturers Seme LAB
Logo Seme LAB
Description METAL GATE RF SILICON FET
Datasheet D1260UK DatasheetD1260UK Datasheet (PDF)

TetraFET D1260UK METAL GATE RF SILICON FET MECHANICAL DATA D (2 pls) C E B 12 3 A 54 G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 12.5V – 175MHz SINGLE ENDED PIN 1 PIN 3 PIN 5 H I FM K DT SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN JN GATE SOURCE (COMMON) DIM mm A 6.35 DIA B 3.17 DIA C 18.41 D 5.46 E 5.21 F 7.62 G 21.59 H 3.94 I 12.70 J 0.13 K 24.76 M 2.59 N 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.

  D1260UK   D1260UK


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TetraFET D1260UK METAL GATE RF SILICON FET MECHANICAL DATA D (2 pls) C E B 12 3 A 54 G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 12.5V – 175MHz SINGLE ENDED PIN 1 PIN 3 PIN 5 H I FM K DT SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN JN GATE SOURCE (COMMON) DIM mm A 6.35 DIA B 3.17 DIA C 18.41 D 5.46 E 5.21 F 7.62 G 21.59 H 3.94 I 12.70 J 0.13 K 24.76 M 2.59 N 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 175W BVDSS Drain – Sourc.


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