Document
SHINDENGEN
Super Fast Recovery Rectifiers
Single
D1FL40
400V 0.8A
FEATURES Small SMT Low noise trr50ns APPLICATION Switching power supply DC/DC converter Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation
OUTLINE DIMENSIONS
Case : 1F Unit : mm
RATINGS
Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25 On alumina substrate
Peak Surge Forward Current
IFSM
50Hz sine wave, R-load, Ta=28 On glass-epoxy substrate 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25
Ratings -55 to 150 150 400 0.8 0.6 25 Ratings Max 1.3 Max 10 Max 50 Max 23 Max 108 Max 157
Unit V A A Unit V ÊA ns /W
Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions VF Forward Voltage IF=0.8A, Pulse measurement IR Reverse Current VR=VRM, Pulse measurement trr Reverse Recovery Time IF=0.5A, IR=1A Æjl junction to lead Æja junction to ambient, On alumina substrate Thermal Resistance
junction to ambient, On glass-epoxy substrate
Copyright & Copy;2003 Shindengen Electric Mfg.Co.,Ltd.
D1FL40
10
Forward Voltage
1
Forward Current IF [A]
Tl=150°C [MAX] Tl=150°C [TYP] Tl=25 °C [MAX] Tl=25 °C [TYP] 0.1
Pulse measurement per diode
0.01
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
Forward Voltage VF [V]
D1FL40
1.6 1.4
Forward Power Dissipation
DC D=0.8 0.5
Forward Power Dissipation PF [W]
1.2 0.3 1 0.8 0.6 0.4 0.2 0 0.1 0.05 0.2
SIN
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Average Rectified Forward Current IO [A]
Tj = Tjmax IO 0 tp D=tp /T T
D1FL40
1.6
Derating Curve
Average Rectified Forward Current IO [A]
1.4 1.2 1 0.5 0.8 0.6 0.4 0.2 0 SIN 0.3 0.2 0.1 0.05 DC Alumina substrate Soldering land 2mm×2mm Conductor layer 20µm Substrate thickness 0.64mm
D=0.8
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM IO 0 0 VR tp D=tp/T T
D1FL40
1
Derating Curve
Average Rectified Forward Current IO [A]
DC 0.8 0.5 0.6 SIN 0.3 0.2 0.4 0.1 0.05 0.2
D=0.8
Glass-epoxy substrate Soldering land 2mm×2mm Conductor layer 35µm
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = VRM IO 0 0 VR tp D=tp/T T
D1FL40
35
Peak Surge Forward Capability
IFSM
10ms 10ms
30
1 cycle
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25 °C before surge current is applied
25
20
15
10
5
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
D1FL40
Junction Capacitance
100
f=1MHz Tl=25 °C TYP per diode
Junction Capacitance Cj [pF]
10
1 10
1
100
Reverse Voltage VR [V]
.