D1FS6
Schottky Barrier Diodes 60V, 1.1A
Feature
・Small SMD ・High Recovery Speed ・Low VF ・Based on AEC-Q101 ・Pb free term...
D1FS6
Schottky Barrier Diodes 60V, 1.1A
Feature
・Small SMD ・High Recovery Speed ・Low VF ・Based on AEC-Q101 ・Pb free terminal ・RoHS:Yes
OUTLINE
Package (House Name): 1F Package (JEDEC Code): DO-214AC
Equivalent circuit
Absolute Maximum Ratings (unless otherwise specified : Tl=25℃)
Item
Symbol
Conditions
Ratings
Unit
Storage temperrature
Tstg
-55 to 150
℃
Junction temperature
Tj
150
℃
Repetitive peak reverse voltage
VRRM
60
V
Repetitive peak surge reverse voltage
VRRSM Pulse width 0.5ms, duty=1/40
65
V
Average forward current
IF(AV)
50Hz sine wave, Resistance load, On alumina substrate, Ta=38℃
1.1
A
50Hz sine wave, Resistance load, On glass-epoxy
Average forward current
IF(AV) substrate, Ta=33℃
0.82
A
Surge forward current
50Hz sine wave, Non-repetitive, 1cycle, Peak value,
IFSM
Tj=125℃
40
A
Repetitive peak surge reverse power
PRRSM Pulse width 10µs, Tj=25℃
60
W
※︓See the original Specifications
Shindengen Electric Manufacturing Co., Ltd. 1/7
D1FS6_Rev.01(2020.01)
Electrical Characteristics (unless otherwise specified : Tl=25℃)
Item
Symbol
Conditions
Forward voltage Reverse current Total capacitance Thermal resistance Thermal resistance Thermal resistance
VF IR Ct Rth(j-l) Rth(j-a) Rth(j-a)
IF=1.1A, Pulse measurement VR=60V, Pulse measurement f=1MHz, VR=10V Junction to lead Junction to ambient, On alumina substrate Junction to ambient, On glass-epoxy substrate
※︓See the original Specifications
Ratings MIN TYP MAX
0.58 1
50...