D2011UK FET Datasheet

D2011UK Datasheet, PDF, Equivalent


Part Number

D2011UK

Description

METAL GATE RF SILICON FET

Manufacture

Seme LAB

Total Page 2 Pages
Datasheet
Download D2011UK Datasheet


D2011UK
TetraFET
D2011UK
MECHANICAL DATA
METAL GATE RF SILICON FET
B
E
D
F
8
7
6
5
O
J
KL
C
1
2
A
3
4
Q
N
M
I
P
H
G
DBC1 Package
PIN 1 Source
PIN 5 Source
PIN 2 Drain
PIN 6 Gate
PIN 3 Drain
PIN 7 Gate
PIN 4 Source
PIN 8 Source
DIM mm
Tol. Inches Tol.
A 6.47 0.08 .255 .003
B 0.76 0.08 .030 .003
C 45° 5° 45°
D 0.76 0.08 .030 .003
E 1.14 0.08 .045 .003
F 2.67 0.08 .105 .003
G 11.73 0.13 .462 .005
H 8.43 0.08 .332 .003
I 7.92 0.08 .312 .003
J 0.20 0.02 .008 .001
K 0.64 0.02 .025 .001
L 0.30 0.02 .012 .001
M 3.25 0.08 .128 .003
N 2.11 0.08 .083 .003
O 6.35SQ 0.08 .250SQ .003
P 1.65 0.51 .065 .020
Q 0.13 max .005 max
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• LOW NOISE
• HIGH GAIN
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
70W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
8A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 2543
Issue 1

D2011UK
D2011UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS
h
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 10W
VDS = 28V
f = 1GHz
VDS = 0
VDS = VGS
ID = 1.6A
IDQ = 0.8A
1
1.44
10
40
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 0
VDS = 28V
VDS = 28V
VGS = –5V f = 1MHz
VGS = 0 f = 1MHz
VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
8 mA
8 mA
7V
S
dB
%
96 pF
48 pF
4 pF
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 2.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 2543
Issue 1


Features TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA C D B E 8 1 7 6 3 4 2 A F 5 Q O N M J K L GOLD METALLI SED MULTI-PURPOSE SILICON DMOS RF FET 1 0W – 28V – 1GHz SINGLE ENDED FEATUR ES I P H G DBC1 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DI M A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.4 3 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 PIN 5 Source PIN 6 Gate PIN 7 Gate PIN 8 Source Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max Inches .2 55 .030 45° .030 .045 .105 .462 .332 . 312 .008 .025 .012 .128 .083 .250SQ .06 5 .005 Tol. .003 .003 5° .003 .003 .00 3 .005 .003 .003 .001 .001 .001 .003 .0 03 .003 .020 max • SIMPLIFIED AMPLIF IER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF /UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissip.
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