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D2083UK

Seme LAB

TetraFET

D2083UK MECHANICAL DATA B (4 pls) C G (typ) TetraFET 80W – 28V – 1.0GHz 3 E 2 1 A D 5 I F 4 DIM A B C D E F G H I ...


Seme LAB

D2083UK

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D2083UK MECHANICAL DATA B (4 pls) C G (typ) TetraFET 80W – 28V – 1.0GHz 3 E 2 1 A D 5 I F 4 DIM A B C D E F G H I J K M N PIN 1 PIN 3 mm 13.97 5.72 45° 9.78 1.65R 23.75 1.52R 30.48 19.17 0.13 2.54 1.52 5.08 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.26 0.02 0.13 0.13 0.50 Inches 0.550 0.225 45° 0.385 0.065R 0.935 0.060R 1.200 0.755 0.005 0.100 0.060 0.200 DRAIN 1 GATE 2 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.010 0.001 0.005 0.005 0.020 SOURCE (COMMON) PIN 2 DRAIN 2 GATE 1 PIN 4 N M H J K PIN 5 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS VGS(th) gm Ciss Coss Crss VGS(th)match Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage * Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Threshold Matching Voltage Between Sides PO = 80W f = 1GHz V = 28V I = 100mA V = 28V V = 20V I = 10mA V = 10V T = 300µS VDS = 0V V = 28V V = 28V ID = 10mA VDS = VGS VGS = -5V I = 2A 1 65 Typ. Max. Unit V 3 1 7 mA µA V mhos pF pF pF 0.1 V 2.5 128 51 2.7 TOTAL DEVICE IDQ = 2A Thermal Resistance = 0.72 °C / W HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. ...




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