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D2219UK Dataheets PDF



Part Number D2219UK
Manufacturers Seme LAB
Logo Seme LAB
Description METAL GATE RF SILICON FET
Datasheet D2219UK DatasheetD2219UK Datasheet (PDF)

TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM Dim. A B C D E F .

  D2219UK   D2219UK


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TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM Dim. A B C D E F G H J K L M N P mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45° 0° 7° 0.20 2.18 4.57 Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180 Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003 APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 17.5W 40V ±20V 2A –65 to 150°C 200°C Prelim. 12/95 D2219UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 2.5W VDS = 12.5V f = 1GHz VDS = 0V VGS = –5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 0.1A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.2A 0.5 0.18 10 40 20:1 40 Typ. Max. Unit V 1 1 7 mA µA V S dB % — 12 10 1 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 10°C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 12/95 .


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