CY7C1485V33

PRELIMINARY CY7C1484V33 CY7C1485V33 2M x 36/4M x 18 Pipelined DCD SRAM Features Fast clock speed: 250, 200, and 167 MHz Provide high-performance 3-1-1-1 access rate Fast access time: 2.6, 3.0, and 3.4 ns Optimal for depth expansion Single 3.3V –5% and +5% power supply VDD Separate VDDQ for 3.3V or 2.5V Common data inputs and data outputs Byte Write Enable and Global Write control Chip enable for address pipeline Address, data, and control registers Internally self-timed Write Cycle Burst control pins (interleaved or linear burst sequence) Automatic power-down for portable applications High-density, high-speed packages JTAG boundary scan for BGA packaging version Available in 119-ball bump BGA and 100-pin TQFP packages (CY7C1484V33 and CY7C1485V33). 165-ball FBGA will be offered on an opportunity basis. (Please contact Cypress sales or marketing) internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE), burst control inputs (ADSC, ADSP, and ADV), write enables (BWa, BWb, BWc, BWd, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and burst mode control (MODE). The data (DQx) and the data parity (DPx) outputs, enabled by OE, are also asynchronous. DQa,b,c,d and DPa,b,c,d apply to CY7C1484V33 and DQa,b and DPa,b apply to CY7C1485V33. a, b, ...