CY7C266

1CY7C266 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features CMOS for optimum speed/power Windowed for reprogrammability High speed — 20 ns (Commercial) Low power — 660 mW (Commercial) Super low standby power — Less than 85 mW when deselected EPROM technology 100% programmable 5V ±10% VCC, commercial and military TTL-compatible I/O Direct replacement for 27C64 EPROMs powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C266 is a plug-in replacement for EPROM devices. The EPROM cell requires only 12.5V for the super voltage and low-current requirements allow for gang programming. The EPROM cells allow for each memory location to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming, the product will meet DC and AC specification limits. Reading is accomplished by placing an active LOW signal on OE and CE. The contents of the memory location addressed by the address lines (A0 through A12) will become available on the output lines (O0 through O7). Functional Description The CY7C266 is a high-performance 8192-word by 8-bi...