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CXG1008N Dataheets PDF



Part Number CXG1008N
Manufacturers Sony Corporation
Logo Sony Corporation
Description High Isolation SPDT Switch
Datasheet CXG1008N DatasheetCXG1008N Datasheet (PDF)

CXG1008N High Isolation SPDT Switch For the availability of this product, please contact the sales office. Description The CXG1008N is a high isolation SPDT switch suitable for Digital Cellular applications, Cable TV and so on. This device is part of a growing family of MMIC Antenna switches for digital cellular and cordless radios. It uses the state-of-the-art Sony GaAs JFET process. Features • Positive voltage supply only • Ultra high isolation, typically 58 dB (GSM 900) • Low insertion loss, .

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CXG1008N High Isolation SPDT Switch For the availability of this product, please contact the sales office. Description The CXG1008N is a high isolation SPDT switch suitable for Digital Cellular applications, Cable TV and so on. This device is part of a growing family of MMIC Antenna switches for digital cellular and cordless radios. It uses the state-of-the-art Sony GaAs JFET process. Features • Positive voltage supply only • Ultra high isolation, typically 58 dB (GSM 900) • Low insertion loss, typically 0.7 dB at 20 dBm input level (GSM 900) • Stable Characteristics over wide temperature range • Fast switching-50 ns Typical • Low current consumption, 50 µA typical at 3.0 V • 8 pin SSOP package (3.0 × 6.4 mm) Applications • Basestation LO switching (GSM900/1800/1900, PHS) • Other Low Power SPDT applications requiring high isolation (e.g. Cable TV) 8 pin SSOP (Plastic) ESD As with other GaAs semiconductors, ESD precautions must be adhered to. Typical Basestation Application Rx Mixer Vco1 50ohm 50ohm Tx Mixer Vco2 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E95443B89-TE CXG1008N Schematic/Pinout Pin No. 1 2 3 4 5 6 7 8 FUNCTION CONTROL B RF PORT 1 GROUND CONTROL A RF PORT 2 GROUND GROUND RF PORT 3 1 CTLB Port1 GND CTLA 8-pin SSOP (plastic) 8 Port3 GND GND Port2 Block Diagram/Truth Table Block Diagram VCTLA High Port3 Port1 Port2 VCTLB Low High Port1-Port2 ON Port1-Port3 OFF Port1-Port2 OFF Port1-Port3 ON Low External Circuitry Optional CTLB D1 Port1 100pF 1 C1 8 100pF C2 Port3 2 100pF C2 CXG1008N 7 6 5 100pF C2 Port2 3 CTLA D1 Optional 100pF 4 C1 When using the CXG1008N, the following external components should be used: C1: This is used for signal line filtering. 100 pF is recommended. C2: This is used for RF De-coupling and must be used in all applications. 100 pF is recommended. D1: 6.2 V Zener diodes may be incorporated at the Control lines, as indicated, in order to give improved ESD performance if necessary. —2— CXG1008N Application GSM900/1800/1900 Basestation LO switching Electrical Characteristics Measurement Conditions, Vctl (L)=0 V, Vctl (H)=5 V, Ta=25 °C Parameter Insertion loss @ 900 MHz Isolation @ 900 MHz Insertion loss @ 1500 MHz Isolation @ 1500 MHz Insertion loss @ 1900 MHz Isolation @ 1900 MHz VSWR ≤ 2 GHz Switching Time Control Current (3 V) P1 dB (Vctl=3 V) P1 dB (Vctl=4 V) P1 dB (Vctl=5 V) ∗( ) Temperature Range –35 to +85 °C Frequency Characteristics Measurement Conditions: Vctl (L)=0 V, Vctl (H)=5 V, Pin=0 dBm CW, T=25 °C Example of Representative Characteristics (Ta=25 °C) Insertion loss, isolation vs. Frequency 0 –10 Min. (51) 52 (46) 47 (41) 42 Typ. 0.7 58 0.75 52 0.8 47 1.3 50 50 24 26 28 Max. ∗1.1 (1.2) 1.15 (1.25) ∗1.2 (1.3) 1.5 100 Unit dB dB dB dB dB dB ns µA dBm dBm dBm –1 Insertion Loss –20 Insertion loss (dB) –2 Isolation –3 –30 –40 –4 –50 –5 1 Frequency (GHz) 2 –60 —3— Isolation (dB) CXG1008N Application Cable TV Electrical Characteristics Measurement Conditions, Vctl (L)=0 V, Vctl (H)=3 V, Pin=10 dBm Ta=25 °C Item Insertion loss Isolation Insertion loss Isolation Input VSWR Output VSWR Switching time Control pin current Symbol IL1 ISO1 IL2 ISO2 VSWRIN VSWROUT TSW Ictl Condition f=1.0 GHz f=2.0 GHz 38 Min. 52 Typ. 0.7 57 0.8 43 1.3 1.3 50 50 Max. 1.1 1.2 1.5 1.5 100 ns µA Unit dB dB dB dB —4— CXG1008N ESD Precautions As this is a GaAs MMIC, ESD precautions must be adhered to, as outlined sony’s standard Data Book. Please contact Sony if detailed ESD performance data is required. Absolute Maximum Ratings (Ta=25 °C) • Control voltage Vctl 6 V • Operating temperature Topr –35 to +85 °C • Storage temperature Tstg –65 to +150 °C • Input Power Pin 30 dBm Tape and Reel Information This device is available in Tape and Reel. Order CXG1008N-T4 Reel Quantity: 1000 pieces/reel Reel Dimensions: 254 mm plastic reel: 16 mm width embossed taping. —5— CXG1008N Sony GSM Lineup MCU Flash SRAM 64K × 16 SGM2016AM-21-T7 LNA 90MHz I SAW RX Q AD Speech Codec DSP PLL2 IT362/IT402 IT363/IT403 IT413 PLL1 CXA3021R TX I Q DA CXG1037FN GSM1800/1900 RX SPDT Antenna Switches CXG1028ATN GSM900/1800/1900 CXG1006N GSM1800/1900 HP ANT CAR ANT TX CXG1017N GSM900/1800/1900 CXG1045N GSM900/1800/1900 Sony IC —6— CXG1008N Package Outline Unit : mm 8PIN SSOP (PLASTIC) ∗3.0 ± 0.1 + 0.2 1.25 – 0.1 0.1 8 5 A ∗4.4 ± 0.1 1 4 0.65 + 0.08 0.24 – 0.07 B 0.25 0.13 M 0.1 ± 0.05 6.4 ± 0.2 (0.22) (0.15) + 0.025 0.17 – 0.015 + 0.08 0.24 – 0.07 0° to 10° DETAIL A DETAIL B NOTE: Dimension “∗” does not include mold protrusion. PACKAGE STRUCTURE.


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