CXG1010N

CXG1010N Power Amplifier for PHS For the availability of this product, please contact the sales office. Description The CXG1010N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features High output power 21.5 dBm Positive power supply drive VDD=3.4 V Low current consumption 200 mA High gain 40 dB Typ. Low distortion (ACP) –59 dBc Typ. Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C) 6 Supply voltage VDD Voltage between gate and source Vgs0 1.5 Drain current IDD 500 Power dissipation PD 3 Channel temperature Operating temperature Storage temperature Tch Top Tstg 175 –35 to +85 –65 to +150 V V mA W °C °C °C Electrical Characteristics VDD=3.4 V, VCTL=2.0 V, f=1.90 GHz Item ∗1 Current consumption ∗1 Gate voltage adjustment value Input VSWR Output power (for –15.5 dBm input) ∗2 Power gain ∗2 Gain control ∗3 ∗2 Average leak power level (600 kHz±100 kHz) ∗2 Average leak power level (900 kHz±100 kHz) Symbol IDD VGG2 VSWRIN POUT GP GCTL PLEAK600 PLEAK900 Min. 0 21.5 37 Typ. 200 0.5 1.5 40 20 –59 –65 –54 –59 Max. 1.0 2.0 43 (Ta=25 °C) Unit mA V — dBm dB dB dBc dBc ∗1 This value is adjusted by VGG1 and VGG2 set with Sony’s recommended current adjustment method when 21.5 dBm is output. In this time, the voltage ratio of VGG1 and VGG2 should match to the voltage ratio generated by the resistance of the recommended gat...