CXG1030N

CXG1030N Power Amplifier for PHS Description The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features Output power 21 dBm Positive power supply 3.0 V Low current consumption 170 mA High power gain 39 dB Typ. Small mold package 16-pin SSOP Structure GaAs J-FET MMIC 16 pin SSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C) Supply voltage VDD 6 V Voltage between gate and source Vgs0 1.5 V Drain current IDD 500 mA Power dissipation PD 3 W Channel temperature Tch 175 °C Operating temperature Top –35 to +85 °C Storage temperature Tstg –65 to +150 °C Electrical Characteristics VDD=3.0 V, VCTL=2.0 V, f=1.90 GHz Item ∗1 Current consumption ∗1 Gate voltage adjustment value Output power ∗2 Power gain ∗2 Adjacent channel leak power ratio (600 kHz ±100 kHz) Symbol IDD VGG2 POUT GP ACPR600 Min. 0 21 36 Typ. 170 0.4 39 –59 –54 Max. 0.8 (Ta=25 °C) Unit mA V dBm dB dBc ∗1 Values where VGG1 and VGG2 are adjusted so that IDD becomes 170 mA when 21.0 dBm is output. ∗2 When 21.0 dBm is output. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— ...