CXG1047FN

CXG1047FN Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier chain with a single input and output. The PA has a single RF input for both the GSM900 and DCS1800 transmit signals. The amplifier can be configured for 2 separate inputs. Power control is best achieved by variation of VDD1/VDD2 and VDD3 drain voltages with an external transistor. A proposed power control circuit configuration is described. External PMOS drain switch should be used to achieve low leakage. 16 pin HSOF (Plastic) Features Single positive rail only Typical output power of 35.5dBm at 900MHz and 33dBm at 1800MHz Typical efficiency of 37% at 900MHz and 37% at 1800MHz Small package size with integral heat-sink: 16-pin HSOF (5.6 × 4.4 × 0.9mm) 3-stage amplifier chain Simple pin diode circuitry is used to switch between 1800 and 900MHz matching circuits Off mode insertion loss typically 27dB at 900MHz (Pin = +6dBm at VDD = 0V) Typical transmit noise @20MHz offset –79dBm/100kHz Applications Dual-band handsets transmitting on the GSM900 or DCS1800 frequencies Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25°C) Drain voltage VDD1, VDD2, VDD3 8 V Gate voltage VGG1, VGG2, VGG3 –5 to +1 V Input power Pin, max. 12 dBm Channel temperature Tch, max. 150 °C Operatin...