Receive Dual Low Noise Amplifier/Mixer
CXG1082EN
Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office.
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Description
CXG1082EN
Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office.
Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. Features High conversion gain: Gp = 17dB (LNA Typ.) Gc = 11 to 12dB (MIX Typ.) Low noise figure: NF = 1.5dB (LNA Typ.) NF = 4.2dB (MIX Typ.) Single 3V power supply operation Low LO input power operation PLO = –15dBm Single CTL pin achieved by the built-in inverter circuit 16-pin VSON package Applications 800MHz Japan digital cellular telephones (PDC) Structure GaAs J-FET MMIC 16 pin VSON (Plastic)
Absolute Maximum Ratings (Ta = 25°C) Supply voltage VDD 4.5 V Input power PIN +13 dBm Current consumption IDD 15 mA Operating temperature Topr –35 to +85 °C Storage temperature Tstg –65 to +150 °C Recommended Operating Voltages Supply voltage VDD 2.7 to 3.3 Control voltage VCTL (H) 2.4 to 3.3 VCTL (L) 0 to 0.3
V V V
Block Diagram
Pin Configuration
LNA RFIN1
9
8
LNA RFIN2
LNA RFIN1
9
8 7 6 5 4 3 2 1
LNA RFIN2 CAP LNA RFOUT/VDD1 (LNA) GND OPT MIX RFIN GND LO IN
CAP 10 6 LNA RFOUT GND 11 CTL 12 GND 13 3 MIX RFIN GND 14 VDD2 (LO AMP) 15 IFOUT 16 1 LO IN IFOUT/VDD3 (MIX) 16
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
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