DatasheetsPDF.com

CXG1082EN

Sony Corporation

Receive Dual Low Noise Amplifier/Mixer

CXG1082EN Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. ...


Sony Corporation

CXG1082EN

File Download Download CXG1082EN Datasheet


Description
CXG1082EN Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. Features High conversion gain: Gp = 17dB (LNA Typ.) Gc = 11 to 12dB (MIX Typ.) Low noise figure: NF = 1.5dB (LNA Typ.) NF = 4.2dB (MIX Typ.) Single 3V power supply operation Low LO input power operation PLO = –15dBm Single CTL pin achieved by the built-in inverter circuit 16-pin VSON package Applications 800MHz Japan digital cellular telephones (PDC) Structure GaAs J-FET MMIC 16 pin VSON (Plastic) Absolute Maximum Ratings (Ta = 25°C) Supply voltage VDD 4.5 V Input power PIN +13 dBm Current consumption IDD 15 mA Operating temperature Topr –35 to +85 °C Storage temperature Tstg –65 to +150 °C Recommended Operating Voltages Supply voltage VDD 2.7 to 3.3 Control voltage VCTL (H) 2.4 to 3.3 VCTL (L) 0 to 0.3 V V V Block Diagram Pin Configuration LNA RFIN1 9 8 LNA RFIN2 LNA RFIN1 9 8 7 6 5 4 3 2 1 LNA RFIN2 CAP LNA RFOUT/VDD1 (LNA) GND OPT MIX RFIN GND LO IN CAP 10 6 LNA RFOUT GND 11 CTL 12 GND 13 3 MIX RFIN GND 14 VDD2 (LO AMP) 15 IFOUT 16 1 LO IN IFOUT/VDD3 (MIX) 16 GaAs MMICs are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)