CXK581000AYM

CXK581000ATM/AYM/AM/AP -55SL/70SL/10SL 131072-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK581000ATM/AYM/AM/AP is a high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package line-up. The CXK581000ATM/AYM/AM/AP ia a suitable RAM for portable equipment with battery back up. Features Fast access time: CXK581000ATM/AYM/AM/AP (Access time) -55LL/55SL 55ns (Max.) -70LL/70SL 70ns (Max.) -10LL/10SL 100ns (Max.) Low standby current: CXK581000ATM/AYM/AM/AP -55LL/70LL/10LL 20µA (Max.) -55SL/70SL/10SL 12µA (Max.) Low data retention current CXK581000ATM/AYM/AM/AP -55LL/70LL/10LL 12µA (Max.) -55SL/70SL/10SL 4µA (Max.) Single +5V supply: +5V ±10% Low voltage data retention: 2.0V (Min.) Broad package line-up CXK581000ATM/AYM 8mm × 20mm 32 pin TSOP package CXK581000AM 525mil 32 pin SOP package CXK581000AP 600mil 32 pin DIP package Functions 131072-word × 8-bit static RAM Structure Silicon gate CMOS IC CXK581000ATM 32 pin TSOP (Plastic) CXK581000AYM 32 pin TSOP (Plastic) -55LL/70LL/10LL CXK581000AM 32 pin SOP (Plastic) CXK581000AP 32 pin DIP (Plastic) Block Diagram A10 A11 A9 A8 A13 A15 A16 A14 A12 A7 VCC Buffer Row Decoder Memory Matrix 1024 × 1024 GND A6 A5 A4 A3 A2 A1 A0 Buffer I/O Gate Column ...