CXK58512M

CXK58512TM/M -55LL/70LL/10LL ∗ 65536-word × 8-bit High Speed CMOS Static RAM ∗Under For the availability of this product, please contact the sales office. development Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable RAM for portable equipment with battery back up. Features Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.) Low standby current 10µA (Max.) Low data retention current 6µA (Max.) Single +5V supply: +5V ± 10% Low voltage data retention: 2.0V (Min.) Broad package line-up CXK58512TM 8mm × 20mm 32 pin TSOP package CXK58512M 525mil 32 pin SOP Package Function 65536-word × 8 bit static RAM Structure Silicon gate CMOS IC CXK58512TM 32 pin TSOP (Plastic) CXK58512M 32 pin SOP (Plastic) Block Diagram A15 A13 A8 A11 A9 A7 A6 A5 A14 A12 Buffer Row Decoder Memory Matrix 1024 × 512 VCC GND A4 A3 A10 A0 A2 A1 OE Buffer I/O Gate Column Decoder Buffer WE CE1 CE2 I/O Buffer I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony canno...