DatasheetsPDF.com

CXK58512TM Dataheets PDF



Part Number CXK58512TM
Manufacturers Sony Corporation
Logo Sony Corporation
Description 65536-word X 8-bit High Speed CMOS Static RAM
Datasheet CXK58512TM DatasheetCXK58512TM Datasheet (PDF)

CXK58512TM/M -55LL/70LL/10LL ∗ 65536-word × 8-bit High Speed CMOS Static RAM ∗Under For the availability of this product, please contact the sales office. development Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable RAM for portable equipment with batter.

  CXK58512TM   CXK58512TM


Document
CXK58512TM/M -55LL/70LL/10LL ∗ 65536-word × 8-bit High Speed CMOS Static RAM ∗Under For the availability of this product, please contact the sales office. development Description The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed. The CXK58512TM/M is a suitable RAM for portable equipment with battery back up. Features • Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.) • Low standby current 10µA (Max.) • Low data retention current 6µA (Max.) • Single +5V supply: +5V ± 10% • Low voltage data retention: 2.0V (Min.) • Broad package line-up CXK58512TM 8mm × 20mm 32 pin TSOP package CXK58512M 525mil 32 pin SOP Package Function 65536-word × 8 bit static RAM Structure Silicon gate CMOS IC CXK58512TM 32 pin TSOP (Plastic) CXK58512M 32 pin SOP (Plastic) Block Diagram A15 A13 A8 A11 A9 A7 A6 A5 A14 A12 Buffer Row Decoder Memory Matrix 1024 × 512 VCC GND A4 A3 A10 A0 A2 A1 OE Buffer I/O Gate Column Decoder Buffer WE CE1 CE2 I/O Buffer I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E94915A58-PK CXK58512TM/M Pin Configuration (Top View) A11 A9 A8 A13 WE CE2 A15 Vcc NC NC A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 OE 31 A10 30 CE1 29 I/O8 28 I/O7 27 I/O6 26 I/O5 Pin Description NC 1 NC 2 A14 3 A12 4 A7 5 A6 6 A5 A4 A3 A2 7 8 9 1 32 Vcc 31 A15 30 CE2 29 WE 28 A13 27 26 25 24 Symbol A0 to A15 I/O1 to I/O8 CE1, CE2 WE OE VCC GND NC Description Address input Data input output Chip enable 1, 2 input Write enable input Output enable input Power supply Ground No connection CXK58512TM 25 I/O4 24 GN D 23 I/O3 22 I/O2 21 I/O1 20 A0 19 A1 18 A2 A3 17 A8 A9 A11 OE A10 1 I/O1 12 A1 0 A0 1 23 CE1 22 I/O8 21 I/O7 20 I/O6 19 18 17 I/O2 1 3 I/O3 1 4 GND 15 16 I/O5 I/O4 CXK58512M Absolute Maximum Ratings Item Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature • time Symbol VCC VIN VI/ O PD Topr Tstg Tsolder (Ta = 25°C, GND = 0V) Rating –0.5 to +7.0 –0.5∗ to VCC + 0.5 –0.5∗ to VCC + 0.5 0.7 0 to +70 –55 to +150 235 • 10 Unit V V V W °C °C °C • s ∗ VIN, VI/O = –3.0V Min. for pulse width less than 50ns. Truth Table CE1 CE2 H × L L L × L H H H OE × × H L × WE × × H H L Mode Not selected Not selected Output disable Read Write I/O pin High Z High Z High Z Data out Data in VCC Current ISB1, ISB2 ISB1, ISB2 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ×: "H" or "L" DC Recommended Operating Conditions Item Supply voltage Input high voltage Input low voltage Symbol VCC VIH VIL Min. 4.5 2.2 –0.3∗ (Ta = 0 to +70°C, GND = 0V) Typ. 5.0 — — Max. 5.5 VCC + 0.3 0.8 Unit V V V ∗ VIL = –3.0V Min. for pulse width less than 50ns. –2– CXK58512TM/M Electrical Characteristics • DC Characteristics Item Input leakage current Output leakage current Symbol ILI ILO (VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C) Test conditions VIN = GND to VCC CE1 = VIH or CE2 = VIL or OE = VIH or WE = VIL VI/O = GND to VCC CE1 = VIL, CE2 = VIH VIN = VIH or VIL IOUT = 0mA Min. cycle duty = 100% IOUT = 0mA Cycle time 1µs duty = 100% IOUT = 0mA CE1 ≤ 0.2V CE2 ≥ Vcc – 0.2V VIL ≤ 0.2V VIH ≥ Vcc – 0.2V CE2 ISB1 Standby current ISB2 Output high voltage Output low voltage ∗ VCC = 5V, Ta = 25°C VOH VOL or r 0 to +70°C 0.2V CE1 ≥ Vcc – 0.2V 0 to +40°C CE2 ≥ Vcc – 0.2V +25°C -55LL -70LL -10LL Min. –1 –1 Typ.∗ — — Max. +1 +1 Unit µA µA Operating power supply current ICC1 — — — — 7 45 40 35 15 90 70 60 mA ICC2 mA Average operating current ICC3 — 10 20 mA — — — — 2.4 — — — 0.4 0.6 — — 10 2 1 3 — 0.4 mA V V µA o CE1 = VIH or CE2 = VIL IOH = –1.0mA IOL = 2.1mA –3– CXK58512TM/M I/O capacitance Item Input capacitance I/O capacitance Symbol Test conditons CIN CI/O VIN = 0V VI/O = 0V Min. — — (Ta = 25°C, f = 1MHz) Typ. — — Max. 7 8 Unit pF pF Note) This parameter is sampled and is not 100% tested. AC Characteristics • AC test conditions Item Input pulse high level Input pulse low level Input rise time Input fall time (VCC = 5V ± 10%, Ta = 0 to +70°C) Conditions VIH = 2.2V VIL = 0.8V tr = 5ns tf = 5ns 1.5V CL∗ = 30pF, 1TTL CL∗ = 100pF, 1TTL CL TTL • T e s tc i r c u i t Input and output reference level Output load conditions -55LL -70LL/10LL ∗ CL includes scope and jig capacitances. –4– CXK58512TM/M • Read cycle (WE = "H") Item Read cycle time Address access time Symbol tRC (Vcc = 5V ± 10%, GND = 0V, Ta = 0 to +70°C) -55LL Min. 55 — — — — 15 .


CXK58512M CXK58512TM CXK591000M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)