CXK5B16120J

CXK5B16120J/TM -12 65536-word × 16-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B16120J/TM is a high speed 1M bit BiCMOS static RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. Features Single 3.3V Supply 3.3V±0.3V Fast access time 12ns (Max.) Low stand-by current: 10mA (Max.) Low power operation 972mW (Max.) Package line-up Dual Vcc/Vss CXK5B16120J 400mil 44pin SOJ Package CXK5B16120TM 400mil 44pin TSOP Package CXK5B16120J 44 pin SOJ (Plastic) CXK5B16120TM 44 pin TSOP (Plastic) Function 65536-word × 16-bit static RAM Structure Silicon gate Bi-CMOS IC Block Diagram A14 A15 A9 A8 A12 A13 A11 A10 Buffer Row Decoder Memory Vcc Matrix 256 × 4096 Pin configuration (Top View) A4 1 A3 2 A2 3 A1 4 A0 5 CE 6 GND I/O1 7 I/O2 8 I/O3 9 I/O4 1 0 Vcc 11 44 A5 43 A6 42 A7 41 OE 40 UB 39 LB 38 I/O16 37 I/O15 36 I/O14 35 I/O13 34 GND 33 Vcc 32 I/O12 31 I/O11 30 I/O10 29 I/O9 28 NC 27 A8 26 A9 25 A10 24 A11 23 NC Pin Description Symbol Description A0 to A15 Address input I/O1 to I/O8 Data input output (lower byte I/O) I/O9 Data input output to I/O16 (upper byte I/O) CE WE OE LB UB Vcc GND NC Chip enable input Write enable input Output enable input Lower byte select input Upper byte select input +3.3V Power supply Ground No connection A5 A4 A3 A0 A2 A1 A6 A7 UB LB WE OE CE I/O1 I/O16 I/O Buffer B...