DatasheetsPDF.com

CXK5V16100TM-10LLX Dataheets PDF



Part Number CXK5V16100TM-10LLX
Manufacturers Sony Corporation
Logo Sony Corporation
Description 65536-word X 16-bit High Speed CMOS Static RAM
Datasheet CXK5V16100TM-10LLX DatasheetCXK5V16100TM-10LLX Datasheet (PDF)

CXK5V16100TM -85LLX/10LLX 65536-word × 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required. Features • Extended operating temperature range: –25 to +85°C • Fast ac.

  CXK5V16100TM-10LLX   CXK5V16100TM-10LLX


Document
CXK5V16100TM -85LLX/10LLX 65536-word × 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required. Features • Extended operating temperature range: –25 to +85°C • Fast access time: (Access time) -85LLX 85ns (max.) -10LLX 100ns (max.) • Low power consumption operation: Standby / DC operation 1.7µW (typ.) / 3.3mW (typ.) • Single 3.3V supply: 3.3V±0.3V • Fully static memory: No clock or timing strobe required • Equal access and cycle time • Common data input and output: three state output • Directly LVTTL compatible: All inputs and outputs • Low voltage data retention: 2.0V (min.) • 400mil 44pin TSOP (type II) package Block Diagram A1 A0 A7 A6 A5 A4 A3 A2 A15 A14 GND Vcc Memory Matrix 512 × 1024 Row Decoder Memory Matrix 512 × 1024 Vcc Buffer 44 pin TSOP (PIastic) Function 65536-word × 16-bit static RAM Structure Silicon gate CMOS IC GND CE UB LB OE WE Control I/O Gate Column Decoder Pre Decoder I/O Gate Column Decoder A13 A12 A11 A10 A9 A8 I/O Buffer I/O Buffer Buffer I/O1 I/O8 I/O9 I/O16 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93869A57-PP CXK5V16100TM Pin Configuration (Top View) A4 1 A3 2 A2 3 A1 4 A0 5 CE 6 I/O1 7 I/O2 8 I/O3 9 I/O4 10 Vcc 11 GND 12 I/O5 13 I/O6 14 I/O7 15 I/O8 16 WE 17 A15 18 A14 19 A13 20 A12 21 NC 22 44 A5 43 A6 42 A7 41 OE 40 UB 39 LB 38 I/O16 37 I/O15 36 I/O14 35 I/O13 34 GND 33 Vcc 32 I/O12 31 I/O11 30 I/O10 29 I/O9 28 NC 27 A8 26 A9 25 A10 24 A11 23 NC Pin Description Symbol A0 to A15 I/O1 to I/O16 CE LB UB WE OE VCC GND NC Address input Data input/output Chip enable input Byte enable input (I/O1 to I/O8) Byte enable input (I/O9 to I/O16) Write enable input Output enable input +3.3V power supply Ground No connection Description Absolute Maximum Ratings Item Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature • time Symbol VCC VIN VI/O PD Topr Tstg Tsolder (Ta = 25°C, GND = 0V) Rating –0.5 to +4.6 –0.5∗ to VCC + 0.5 –0.5∗ to VCC + 0.5 0.7 –25 to +85 –55 to +150 235 • 10 Unit V V V W °C °C °C • s ∗ VIN, VI/O = –3.0V Min. for pulse width less than 50ns. Truth Table CE H OE × WE × LB × L L L H L H L L × L L H L L H × H × × H UB × L H L L H L × H I/O1 to I/O8 Not selected Read Read High-Z Write Write Not Write/Hi-Z High-Z High-Z I/O9 to I/O16 Not selected Read High-Z Read Write Not Write/Hi-Z Write High-Z High-Z Vcc Current ISB1, ISB2 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ×: “H” or “L” –2– CXK5V16100TM DC Recommended Operating Conditions Item Supply voltage Input high voltage Input low voltage Symbol VCC VIH VIL Min. 3.0 2.0 –0.3∗ (Ta = –25 to +85°C, GND = 0V) Typ. 3.3 — — Max. 3.6 VCC + 0.3 0.8 Unit V V V ∗ VIL = –3.0V Min. for pulse width less than 50ns. Electrical Characteristics DC and operating characteristics Item Input leakage current Output leakage current Operating power supply current Symbol ILI Test condition VIN = GND to VCC CE = VIH or UB = VIH or LB = VIH or OE = VIH or WE = VIL VI/O = GND to VCC CE = VIL VIN = VIH or VIL IOUT = 0mA Min. cycle Duty = 100% IOUT = 0mA Cycle time 1µs Duty = 100% IOUT = 0mA CE ≤ 0.2V VIL ≤ 0.2V VIH ≥ VCC – 0.2V –25 to +85°C ISB1 CE ≥ VCC – 0.2V –25 to +70°C –25 to +40°C +25°C ISB2 Output high voltage Output low voltage VOH VOL CE = VIH IOH = –2.0mA IOL = 2.0mA 85LLX 10LLX (VCC = 3.3V ± 0.3V, GND = 0V, Ta = –25 to +85°C) Min. –1 Typ.∗ — Max. 1 Unit µA ILO –1 — 1 µA ICC1 — — — 1 40 35 3 55 50 mA ICC2 Average operating current ICC3 mA — 10 20 mA — — — — — 2.4 — — — — 0.5 0.03 — — 40 20 4 2 0.6 — 0.4 mA V V µA Standby current ∗ VCC = 3.3V, Ta = 25°C –3– CXK5V16100TM I/O capacitance Item Input capacitance I/O capacitance Symbol Test conditions CIN CI/O VIN = 0V VI/O = 0V Min. — — (Ta = 25°C, f = 1MHz) Typ. — — Max. 8 10 Unit pF pF Note) This parameter is sampled and is not 100% tested. AC Characteristics • AC test conditions (VCC = 3.3V ± 0.3V, Ta = –25 to +85°C) Item Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level Output load conditions 85ns 100ns Conditions VIH = 2.2V VIL = 0.6V TTL tr = 5ns tf = 5ns 1.4V CL∗ = 30pF, 1TTL CL∗ = 100pF, 1TTL CL ∗ CL includes scope and jig capa.


CXK5V16100TM CXK5V16100TM-10LLX CXK5V16100TM-85LLX


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)