Document
CXK5V8257BTM/BYM/BM -70LL/10LL
32768-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office.
Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs). And special feature are, low power consumption, high speed and broad package line-up. The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features • Single +3.3V supply: 3.3V ±0.3V • Directly LVTTL compatible: All inputs and outputs • Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max.) -10LL 100ns (Max.) • Low standby current: CXK5V8257BTM/BYM/BM -70LL/10LL 3.5µA (Max.) • Low power data retention: 2.0V (Min.) • Available in many packages CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5V8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Silicon gate CMOS IC CXK5V8257BTM 28 pin TSOP (Plastic) CXK5V8257BYM 28 pin TSOP (Plastic)
CXK5V8257BM 28 pin SOP (Plastic)
Block Diagram
A14 A13 A12 A11 A9 A8 A7 A6 A5 A10 A4 A3 A2 A1 A0 OE WE CE I /O1 I /O8
Buffer
Row Decoder
Memory Matrix 512 × 512
VCC GND
Buffer
I /O Gate Column Decoder
Buffer I /O Buffer
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E93836A5Z-ST
CXK5V8257BTM/BYM/BM
Pin Configuration (Top View)
OE A11 A9 A8 A13 WE Vcc A14 A12 A7 A6 A5 A4 A3 A3 A4 A5 A6 A7 A12 A14 Vcc WE A13 A8 A9 A11 OE
22 23 24 25 26 27 28 1 2 3 4 5 6 7 7 6 5 4 3 2 1 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 8 9 10 11 12 13
Pin Description
A10 CE I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2 A2 A1 A0 I/O1 I/O2 I/O3 GND I/O4 I/O5 I/O6 I/O7 I/O8 CE A10
Symbol
A14 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 I/O1 11 I/O2 12 I/O3 13 GND 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
Description Address input data input/output Chip enable input Write enable input Output enable input +3.3V power supply Ground
Vcc WE A13 A8 A9 A11 OE A10 CE I/O8 I/O7 I/O6 I/O5 I/O4
A0 to A14 I/O1 to I/O8 CE WE OE VCC GND
CXK5V8257BTM (Standard Pinout)
CXK5V8257BYM (Mirror Image Pinout)
14 15 16 17 18 19 20 21
CXK5V8257BM
Absolute Maximum Ratings Item Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature · time Symbol VCC VIN VI/O PD Topr Tstg Tsolder
(Ta = 25°C, GND = 0V) Rating –0.5 to +4.6 –0.5∗1 to VCC + 0.5 –0.5∗1 to VCC + 0.5 0.7 0 to +70 –55 to +150 235 · 10 Unit V V V W °C °C °C · s
∗1 VIN, VI/O = –3.0V Min. for pulse width less than 50ns. Truth Table CE H L L L OE × H L × WE × H H L Mode Not selected Output disable Read Write I/O1 to I/O8 High Z High Z Data out Data in VCC Current ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2
× : “H” or “L” DC Recommended Operating Conditions Item Supply voltage Input high voltage Input low voltage Symbol VCC VIH VIL Min. 3.0 2.0 –0.3∗2 (Ta = 0 to +70°C, GND = 0V) Typ. 3.3 — — Max. 3.6 VCC + 0.3 0.8 V Unit
∗2 VIL = –3.0V Min. for pulse width less than 50ns. –2–
CXK5V8257BTM/BYM/BM
Electrical Characteristics • DC characteristics Item Symbol
(VCC = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C) Test Conditions VIN = GND to VCC CE = VIH, OE = VIH or WE = VIL, VI/O = GND to VCC CE = VIL, VIN = VIH or VIL, IOUT = 0mA Min. cycle, Duty = 100%, IOUT = 0mA 70LL 10LL 0 to +70°C Min. –0.5 –0.5 Typ.∗1 — — Max. 0.5 0.5 Unit µA µA
Input leakage current ILI Output leakage current ILO
Operating power supply current
ICC1
— — — — — — — 2.4 —
0.9 21 18 — — 0.12 0.06 — —
2 40 35 3.5 0.7 0.35 0.7 — 0.4
mA
Average operating ICC2 current
mA
Standby current
ISB1
CE ≥ VCC – 0.2V
0 to +40°C +25°C
µA
ISB2 Output high voltage Output low voltage VOH VOL
CE = VIH IOH = –2mA IOL = 2.0mA
mA V V
∗1 VCC = 3.3V, Ta = 25°C
I/O capacitance Item Input capacitance I/O capacitance Symbol Test condition CIN CI/O VIN = 0V VI/O = 0V Min. — —
(Ta = 25°C, f = 1MHz) Typ. — — Max. 8 10 Unit pF pF
Note) This parameter is sampled and is not 100% tested.
AC Characteristics • AC test conditions (VCC = 3.3V ± 0.3V, Ta = 0 to +70°C) Item Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level Output load conditions -70LL -10LL Conditions VIH = 2.0V VIL = 0.8V
TTL
tr = 5ns tf = 5ns
1.4V CL∗2 = 30pF, 1TTL CL∗2 = 100pF, 1TTL
CL
∗2 CL includes scope and jig capacitances. –3–
CXK5V8257BTM/BYM/BM
• Read cycle (WE = “H”) -70LL Item .