32768-word X 8-bit High Speed CMOS Static RAM
CXK5V8257BTM/BYM/BM -70LL/10LL
32768-word × 8-bit High Speed CMOS Static RAM For the availability of this product, pleas...
Description
CXK5V8257BTM/BYM/BM -70LL/10LL
32768-word × 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office.
Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs). And special feature are, low power consumption, high speed and broad package line-up. The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features Single +3.3V supply: 3.3V ±0.3V Directly LVTTL compatible: All inputs and outputs Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max.) -10LL 100ns (Max.) Low standby current: CXK5V8257BTM/BYM/BM -70LL/10LL 3.5µA (Max.) Low power data retention: 2.0V (Min.) Available in many packages CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5V8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Silicon gate CMOS IC CXK5V8257BTM 28 pin TSOP (Plastic) CXK5V8257BYM 28 pin TSOP (Plastic)
CXK5V8257BM 28 pin SOP (Plastic)
Block Diagram
A14 A13 A12 A11 A9 A8 A7 A6 A5 A10 A4 A3 A2 A1 A0 OE WE CE I /O1 I /O8
Buffer
Row Decoder
Memory Matrix 512 × 512
VCC GND
Buffer
I /O Gate Column Decoder
Buffer I /O Buffer
Sony reserves the right to change products and specifications without prior notice. Thi...
Similar Datasheet