High Speed Bi-CMOS Synchronous Static RAM
CXK77B1810AGB -5/6
High Speed Bi-CMOS Synchronous Static RAM
Description The CXK77B1810AGB-5/6 is a high speed 1M bit Bi...
Description
CXK77B1810AGB -5/6
High Speed Bi-CMOS Synchronous Static RAM
Description The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz Inputs and outputs are GTL/HSTL compatible Controlled Impedance Driver Single 3.3V power supply: 3.3V±0.15V Byte-write possible OE asynchronization JTAG test circuit Package 119TBGA 4 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latch mode (R-L mode) Dual clock mode (D-C mode)
Preliminary
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119 pin BGA (Plastic)
Function 65536 word x 18bit High Speed Bi-CMOS Synchronous SRAM Structure Silicon gate Bi-CMOS IC
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–1–
PE96811
CXK77B1810AGB
Block Diagram
16 A0 to 15
Input Reg.
2:1 Mux
Add. Dout 2:1 Mux
Write ...
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