CXK77B3610GB-6

CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz Inputs and outputs are LVTTL/LVCMOS compatible Single 3.3V power supply: 3.3V ± 0.15V Byte-write possible OE asynchronization JTAG test circuit Package 119TBGA 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latch mode (R-L mode) Function 32768 word × 36bit High Speed Bi-CMOS Synchronous SRAM Structure Silicon gate Bi-CMOS IC Preliminary For the availability of this product, please contact the sales office. 119 pin BGA (Plastic) Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– PE95128-PS CXK77B3610GB Block Diagram 15 A0 to 14 Input Reg. 2:1 Mux Add. Dout Write Store Reg. 32K × 36 Din Write pulse 2:1 Mux Ou...