2SD600K

Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB631, D600 (–)100 (–)100 2SB631K, D600K (–)120 (–)120 (–)5 (–)1 (–)2 1 Unit V V V A A W W Tc=25˚C Tj Tstg 8 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ICBO IEBO IE=(–)10µA, IC=0 VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 Conditions B631, D600 B631K, D600K B631, D600 B631K, D600K Ratings min (–)100 (–)120 (–)100 (–)120 (–)5 (–)1 (–)1 typ max Unit V V V V V µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems,...