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2SD602A Dataheets PDF



Part Number 2SD602A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD602A Datasheet2SD602A Datasheet (PDF)

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 2.9 –0.05 1.9±0.2 +0.2 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 1 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Col.

  2SD602A   2SD602A


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Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB710 and 2SB710A Unit: mm s Features q q 2.8 –0.3 0.65±0.15 +0.2 2.9 –0.05 1.9±0.2 +0.2 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 1 0.95 3 0.4 –0.05 +0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD602 2SD602A 2SD602 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 2 1.1 –0.1 60 25 50 5 1 500 200 150 –55 ~ +150 V emitter voltage 2SD602A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : W(2SD602) X(2SD602A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD602 2SD602A 2SD602 2SD602A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA*2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 30 max 0.1 0.16 –0.06 Ratings Unit +0.2 +0.1 1.45 Unit µA V 30 60 25 50 5 85 40 0.35 200 6 *2 V V 160 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 0.6 V MHz 15 pF Pulse measurement Rank classification Rank hFE1 Q 85 ~ 170 2SD602 2SD602A WQ XQ R 120 ~ 240 WR XR S 170 ~ 340 WS XS Marking Symbol 1 Transistor PC — Ta 240 800 700 200 2SD602, 2SD602A IC — VCE Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 400 300 200 100 3mA 2mA 1mA 800 VCE=10V Ta=25˚C 700 IC — I B Collector power dissipation PC (mW) Collector current IC (mA) 600 500 Collector current IC (mA) 20 600 500 400 300 200 100 0 160 120 80 40 0 0 20 40 60 80 100 120 140 160 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75˚C 25˚C –25˚C VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C IC/IB=10 300 hFE — IC VCE=10V Forward current transfer ratio hFE 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT — IE 240 12 Cob — VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB=10V Ta=25˚C IE=0 f=1MHz Ta=25˚C 120 VCER — RBE IC=2mA Ta=25˚C 100 Transition frequency fT (MHz) 200 10 160 8 80 120 6 60 2SD602A 40 2SD602 20 80 4 40 2 0 –1 0 –3 –10 –30 –100 1 3 10 30 100 0 1 3 10 30 100 300 1000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ) 2 .


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