Document
Transistor
2SD602, 2SD602A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB710 and 2SB710A
Unit: mm
s Features
q q
2.8 –0.3 0.65±0.15
+0.2
2.9 –0.05
1.9±0.2
+0.2
Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
1.5 –0.05
+0.25
0.65±0.15
0.95
1
0.95
3
0.4 –0.05
+0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD602 2SD602A 2SD602 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol
2
1.1 –0.1
60 25 50 5 1 500 200 150 –55 ~ +150
V
emitter voltage 2SD602A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol : W(2SD602) X(2SD602A)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD602 2SD602A 2SD602 2SD602A
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob
*1
Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA*2 VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA*2 VCB = 10V, IE = –50mA*2, f = 200MHz VCB = 10V, IE = 0, f = 1MHz
min
typ
0 to 0.1
0.1 to 0.3 0.4±0.2
0.8
30
max 0.1
0.16 –0.06
Ratings
Unit
+0.2
+0.1
1.45
Unit µA V
30 60 25 50 5 85 40 0.35 200 6
*2
V V 160 340
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*1h FE1
0.6
V MHz
15
pF
Pulse measurement
Rank classification
Rank hFE1 Q 85 ~ 170 2SD602 2SD602A WQ XQ R 120 ~ 240 WR XR S 170 ~ 340 WS XS
Marking Symbol
1
Transistor
PC — Ta
240 800 700 200
2SD602, 2SD602A
IC — VCE
Ta=25˚C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 400 300 200 100 3mA 2mA 1mA 800 VCE=10V Ta=25˚C 700
IC — I B
Collector power dissipation PC (mW)
Collector current IC (mA)
600 500
Collector current IC (mA)
20
600 500 400 300 200 100 0
160
120
80
40
0 0 20 40 60 80 100 120 140 160
0 0 4 8 12 16
0
2
4
6
8
10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75˚C 25˚C –25˚C
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 30 10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C IC/IB=10 300
hFE — IC
VCE=10V
Forward current transfer ratio hFE
250 Ta=75˚C 200 25˚C –25˚C
150
100
50
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT — IE
240 12
Cob — VCB
Collector output capacitance Cob (pF)
Collector to emitter voltage VCER (V)
VCB=10V Ta=25˚C IE=0 f=1MHz Ta=25˚C 120
VCER — RBE
IC=2mA Ta=25˚C 100
Transition frequency fT (MHz)
200
10
160
8
80
120
6
60 2SD602A 40 2SD602 20
80
4
40
2
0 –1
0 –3 –10 –30 –100 1 3 10 30 100
0 1 3 10 30 100 300 1000
Emitter current IE (mA)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (kΩ)
2
.