Transistor
2SB745, 2SB745A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementar...
Transistor
2SB745, 2SB745A
Silicon
PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A
Unit: mm
6.9±0.1
0.4
q q q
2.4±0.2 2.0±0.2 3.5±0.1
Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C)
1.0
s
2.5±0.1 1.0
Features
1.5
1.5 R0.9 R0.9
1.0±0.1
R
0.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.85
0.55±0.1
1.25±0.05
0.45±0.05
Ratings –35 –55 –35 –55 –5 –200 –50 400 150 –55 ~ +150
Unit V
3 2 1
emitter voltage 2SB745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5
2.5
EIAJ:SC–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB745 2SB745A 2SB745 2SB745A
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO hFE
*
Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCB = –5V, IE = 2mA IC = –100mA, IB = –10mA VCE = –1V, IC = –100mA VCB = –5V, IE = 2mA, f = 200MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT
min
typ
max –100 –1
4.1±0.2
4.5±0.1
7
Unit nA µA V
–35 –55 –35 –55 –5 180 ...