Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
...
Transistor
2SD662, 2SD662B
Silicon
NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD662 2SD662B 2SD662 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25˚C)
Ratings 250 400 200 400 5 100 70 600 150 –55 ~ +150 Unit
3
0.55±0.1
1.25±0.05
0.45±0.05
2
1
V
2.5 2.5
emitter voltage 2SD662B Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
EIAJ:SC–71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SD662 2SD662B
(Ta=25˚C)
Symbol ICEO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCE = 100V, IB = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 10 200 400 5 30 30 220 150 1.2 V MHz pF min typ max 2 Unit µA V V
Emitter to base voltage Forward current transfer ratio 2SD662 2SD662B
Collector to emitter saturation voltage Transition frequency Collector output capacitance
*h
FE
Rank classification
P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE
Rank
4.1±0.2
High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as ...