Document
2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
2SD669, 2SD669A
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
2SD669 180 120 5 1.5 3 1 20 150 –55 to +150
2SD669A 180 160 5 1.5 3 1 20 150 –55 to +150
Unit V V V A A W W °C °C
2
2SD669, 2SD669A
Electrical Characteristics (Ta = 25°C)
2SD669 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO
1
2SD669A Max — — — 10 320 — 1 1.5 — — Min 180 160 5 — 60 30 — — — — Typ — — — — — — — — 140 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz
Min 180 120 5 — 60 30 — — — —
Typ — — — — — — — — 140 14
DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage
VCE(sat)
Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob
Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B 2SD669 2SD669A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 —
Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3 Collector current IC (A)
Area of Safe Operation
(13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 0.1 0.03 2SD669 0.01 DC Operation(TC = 25°C) (120 V, 0.04 A) (160 V, 0.02A) 2SD669A
20
10
0
50 100 Case temperature TC (°C)
150
1
3 10 30 100 300 Collector to emitter voltage VCE (V)
3
2SD669, 2SD669A
Typical Output Characteristecs 1.0
5 0 5. 5.4 .5 .0 4 3.5 3.0
2.5
Typical Transfer Characteristics 500 Collector current IC (mA) VCE = 5 V
Collector current IC (A)
0.8 0.6
TC = 25°C
200 100
P
C
=
20
2.0
Ta = 75° C
W
50 20 10 5 2
1.5
0.4
1.0
0.2
0.5 mA
IB = 0
1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V)
0
10 20 30 40 50 Collector to emitter voltage VCE (V)
300 DC current transfer ratio hFE 250 200 150 100 50 1 1 3 10 100 300 1,000 3,000 30 Collector current IC (mA) VCE = 5 V
75°C Ta =
Collector to emitter saturation voltage VCE(sat) (V)
DC Current Transfer Ratio vs. Collector Current
Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB 1.0 0.8 0.6
=7
25
–25
25 –25
0.4 0.2 0 1 3
10 30 100 300 Collector current IC (mA)
4
–2 25 5
T
C
5° C
1,000
2SD669, 2SD669A
Base to Emitter Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE(sat) (V) 1.2 Gain b.