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2SD669A Dataheets PDF



Part Number 2SD669A
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD669A Datasheet2SD669A Datasheet (PDF)

2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25.

  2SD669A   2SD669A



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2SD669, 2SD669A Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 2SD669 180 120 5 1.5 3 1 20 150 –55 to +150 2SD669A 180 160 5 1.5 3 1 20 150 –55 to +150 Unit V V V A A W W °C °C 2 2SD669, 2SD669A Electrical Characteristics (Ta = 25°C) 2SD669 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD669A Max — — — 10 320 — 1 1.5 — — Min 180 160 5 — 60 30 — — — — Typ — — — — — — — — 140 14 Max — — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz Min 180 120 5 — 60 30 — — — — Typ — — — — — — — — 140 14 DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B 2SD669 2SD669A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320 — Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3 Collector current IC (A) Area of Safe Operation (13.3 V, 1.5 A) 1.0 (40 V, 0.5 A) 0.3 0.1 0.03 2SD669 0.01 DC Operation(TC = 25°C) (120 V, 0.04 A) (160 V, 0.02A) 2SD669A 20 10 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 Collector to emitter voltage VCE (V) 3 2SD669, 2SD669A Typical Output Characteristecs 1.0 5 0 5. 5.4 .5 .0 4 3.5 3.0 2.5 Typical Transfer Characteristics 500 Collector current IC (mA) VCE = 5 V Collector current IC (A) 0.8 0.6 TC = 25°C 200 100 P C = 20 2.0 Ta = 75° C W 50 20 10 5 2 1.5 0.4 1.0 0.2 0.5 mA IB = 0 1 0 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V) 0 10 20 30 40 50 Collector to emitter voltage VCE (V) 300 DC current transfer ratio hFE 250 200 150 100 50 1 1 3 10 100 300 1,000 3,000 30 Collector current IC (mA) VCE = 5 V 75°C Ta = Collector to emitter saturation voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB 1.0 0.8 0.6 =7 25 –25 25 –25 0.4 0.2 0 1 3 10 30 100 300 Collector current IC (mA) 4 –2 25 5 T C 5° C 1,000 2SD669, 2SD669A Base to Emitter Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE(sat) (V) 1.2 Gain b.


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