2SD756A

2SD755, 2SD756, 2SD756A Silicon NPN Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD755, 2SD756, 2SD756A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD755 100 100 5 50 750 150 –55 to +150 2SD756 120 120 5 50 750 150 –55 to +150 2SD756A 140 140 5 50 750 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SD755 Item Collector to emitter breakdown voltage Collector to base breakdown voltage Collector cutoff current Symbol Min V(BR)CEO 100 V(BR)CBO 100 ICBO 1 2SD756 Max — — 0.5 Min 120 120 — Typ Max — — — — — — — 0.5 800 — 0.75 — 350 1.6 0.2 — — 2SD756A Min 140 140 — 250 125 — — — — Typ Max — — — — — — — 350 1.6 — — 0.5 500 — 0.75 0.2 — — V V Unit Test conditions V V µA IC = 1 mA, RBE = ∞ IC = 10 µA, IE = 0 VCB = 100 V, I E = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 10 mA VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA Typ — — — — — — — 350 1.6 — 250 125 — — — — DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage VBE 1200 250 — 0.75 0.2 — — 125 — — — — VCE(sat) Gain bandwidth product fT Collector output capacitance Cob MHz VCE = 12 V, IC = 5 mA pF VCB = 25 V, IE = 0, f = 1 MHz...